| PART |
Description |
Maker |
| BUZ102SL-4 |
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 6.2 A, 55 V, 0.033 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IXTL2X240N055T |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| BUZ101S Q67040-S4013-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
SIPMOS ? Power Transistor
INDUCTOR SHIELDED 470UH 20% SMT
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
http://
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET
From old datasheet system
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，额定静电释放P沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| RF1K49086 |
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, AVALANCHE RATED, DUAL N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| IXTP02N120P IXTY02N120P |
N-Channel Enhancement Mode Avalanche Rated
0.2 A, 1200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
IXYS Corporation
|
| IXTA110N055T7 |
112 A, 55 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
N-Channel Enhancement Mode Avalanche Rated
|
IXYS CORP
IXYS Corporation
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SI9529DY |
Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET
N/P-Channel 20-V (D-S) Pair
|
Vishay Intertechnology,Inc.
|
| STGF8NC60KD |
N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESH垄芒 IGBT
N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESH IGBT
|
STMicroelectronics
|
| B84113-C-L60 B84113-C-A110 B84113-C-A30 B84113-C-A |
SIFI-C for very high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A
|
EPCOS[EPCOS]
|
| 951CXP825K-SF-F |
AC Rated, Round Axial Leaded, UL 810 Fail Safe, Rated 10,000 AFCLMax.
|
Cornell Dubilier Electr...
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