PART |
Description |
Maker |
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ540 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT2028R-EL-E HAT2028RJ-EL-E HAT2028R-15 |
4 A, 60 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor Sanyo Semicon Device
|
HAT2202C HAT2202C-15 |
Silicon N Channel MOS FET powerswitching Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS DC-DC Converters Switching Voltage Regulators Motor Drivers MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
RJK0364DPA RJK0364DPA-00-J0 |
35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching 40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
RJK0346DPA RJK0346DPA-00-J0 |
65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|