| PART |
Description |
Maker |
| ICS663 663MILFT 663MLF 663MLFT |
PLL BUILDING BLOCK Phase detector and VCO blocks can be used Lower power CMOS process
|
Integrated Device Technology
|
| AP9404GM-HF AP9404GM-HF14 |
Lower Gate Charge, Fast Switching Characteristic
30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP9575GJ-HF AP9575GH-HF AP9575GH-HF-14 AP9575GJ-HF |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP2334GN-HF |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| AP9567GH-HF AP9567GH-HF14 AP9567GJ-HF |
Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
