| PART |
Description |
Maker |
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| WU400 WU100 WU101 WU102 WU103 WU104 WU105 WU106 WU |
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -12.0 VDC. Output current -400 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -15.0 VDC. Output current -333 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 15.0 VDC. Output current 667 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 3.3 VDC. Output current 3000 mA. Input current 10 mA(no load), 2470 mA(full load).
10/15 Watts WU Series 10/15瓦吴系列
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:2100mAh
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:1900mAh; Battery Terminals:Pressure Contact
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 5.0 VDC. Output current 2000 mA. Input current 10 mA(no load), 2620 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 12.0 VDC. Output current 800 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -5.0 VDC. Output current -1000 mA. Input current 10 mA(no load), 2620 mA(full load).
|
XPiQ
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
International Power Sources
|
| 28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的（8K的8）低电压的CMOS EEPROM的（低压4K的位，并行的CMOS EEPROM的）
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS
64K X 1 STANDARD SRAM, 35 ns, QCC28
64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100
0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
(CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AT49BV080 AT49LV080 AT49LV080T-12TC |
8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器)
x8 Flash EEPROM x8闪存EEPROM
|
Atmel Corp.
Atmel, Corp.
|
