PART |
Description |
Maker |
BS829 |
DMOS Transistors (P-Channel)(P???DMOS?朵?绠?
|
GE Security, Inc. GE[General Semiconductor]
|
BS828 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
BS850 |
DMOS Transistors (P-Channel)(P通道DMOS晶体 DMOS晶体管(P沟道)性(P通道的DMOS晶体管)
|
GE Security, Inc. GE[General Semiconductor]
|
BS809 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管(N沟道)(不适用通道的DMOS晶体管)
|
General Semiconductor GE Security, Inc.
|
FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary planar stripe, DMOS technology 500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
TD9944 TD9944TG |
Dual N-Channel Enhancement-Mode Vertical DMOS FETs 240 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
Supertex, Inc. SUTEX[Supertex, Inc]
|
IRF460 IRF460NBSP IRF460PBF |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package HEXFET?TRANSISTORS 500V, N-CHANNEL N-Channel Enhancement MOSFET From old datasheet system TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
IRF[International Rectifier]
|
2SK2356 2SK2356-Z 2SK2355-Z 2SK2355 2SK2356-Z-E1 |
N-channel enhancement type DMOS SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC] NEC Corp.
|
TN1504NW |
N-Channel Enhancement-Mode Vertical DMOS FETs 40 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Supertex, Inc.
|
TP2502 TP2502N8 TP2502ND |
P-Channel Enhancement-Mode Vertical DMOS FETs 0.63 A, 20 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA
|
Supertex, Inc. Supertex Inc SUTEX[Supertex, Inc] Supertex Inc
|
2N7000-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|