PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp. NXP SEMICONDUCTORS
|
BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF1210 |
Dual N-channel dual gate MOSFET
|
PHILIPS[Philips Semiconductors]
|
BF1207 |
Dual N-channel dual gate MOSFET
|
NXP Semiconductors
|
BF1208D115 BF1208D |
Dual N-channel dual gate MOSFET
|
NXP Semiconductors N.V.
|
3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
MC10H21106 MC10H211FNG MC10H211FNR2 MC10H211FNR2G |
Dual 3-Input 3-Output NOR Gate; Package: 20 LEAD PLLC; No of Pins: 20; Container: Rail; Qty per Container: 46 10H SERIES, DUAL 3-INPUT NOR GATE, PQCC20 Dual 3−Input 3−Output NOR Gate
|
ONSEMI[ON Semiconductor]
|
MFE209 |
N-CHANNEL DUAL-GATE
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
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