| PART |
Description |
Maker |
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| 2DD2678-13 2DD2678 2DD2678-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC, 4 PIN
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| 2STW446808 2STW4468 |
10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-247AA
High power NPN epitaxial planar bipolar transistor
|
STMicroelectronics
|
| SFBFX86 BFX86 BFX86.MODE4 |
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| 2N3109 2N3109E4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB
|
| AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
| 2N5337X |
Bipolar NPN Device in a Hermetically sealed TO39
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39
|
Seme LAB
|
| BUX14 BUX14-JQR |
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BC440-6 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| BUV61 BUV61.MOD |
50 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
|
