| PART |
Description |
Maker |
| ISL21009BMB841EP ISL21009CMB850EP ISL21009BMB850EP |
High Voltage Input Precision, Low Noise FGA™ Voltage References; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R THREE TERM VOLTAGE REFERENCE, PDSO8
High Voltage Input Precision, Low Noise FGA Voltage References
|
Intersil, Corp.
Intersil Corporation
|
| JHV2180 JHV21 JHV2112 JHV2116 JHV2120 JHV2124 JHV2 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 24000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 64000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 52000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 76000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 68000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MSK130 |
ULTRA HIGH VOLTAGE HIGH SPEED DIFFERENTIAL OP-AMP
Ultra High Voltage High Speed Differential Operational Amplifier(FET输入，超高电压高速差分运算放大器)
|
List of Unclassifed Manufacturers
M.S. Kennedy Corporation
|
| JHV3780 JHV37 JHV3712 JHV3716 JHV3720 JHV3724 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 57; IFSM (A): 1500; Vrwm (V): 60000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 57; IFSM (A): 1500; Vrwm (V): 36000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| 2SC4854 2SC4854-5 2SC4854-4 |
晶体管|晶体管|叩| 6V的五（巴西）总裁| 15mA的一c）|36AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Low-Voltage Low-Current High-Frequency Amp Applications
Low-Voltage, Low-Current High-Frequency Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1831 |
High-Voltage Amp, High-Voltage Switching
|
SANYO[Sanyo Semicon Device]
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4493 |
High-Voltage Amp/ High-Voltage Switching Applications
High-Voltage Amp, High-Voltage Switching Applications
|
Sanyo Semicon Device
|
