PART |
Description |
Maker |
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
|
CPW235P CPW256P |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET功率模块|独立| 250V五(巴西)直| 16A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 14A I(D)
|
Atmel, Corp.
|
KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C) TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五(巴西)总裁| 200安培我(丙)
|
CERAMATE TECHNOLOGY CO., Ltd.
|
STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
|
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
2DI150D-050 |
Power transistor module for high power switching, AC and DC motor control applications From old datasheet system
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块 From old datasheet system HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|
1DI50MA-050 |
Power Transistor Module
|
Fuji
|
6DI15A-120 |
Power Transistor Module
|
Fuji Semiconductors
|