PART |
Description |
Maker |
MTB8N50E |
TMOS POWER FET 8.0 AMPERES 500 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MTP2P50E_D ON2584 |
TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
|
ON Semi
|
MTU18N50E_D ON2666 ON2665 |
From old datasheet system TMOS POWER FET 18 AMPERES 500 VOLTS
|
ON Semi
|
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] http://
|
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTY30N50E ON2718 MTY30N50E_D MTY30N50 |
From old datasheet system TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTD2N50E ON2497 |
From old datasheet system TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
|
MOTOROLA[Motorola, Inc]
|
MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|
MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor Motorola, Inc
|
MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|