| PART |
Description |
Maker |
| OM6103ST OM6101ST OM6104ST OM6001ST OM6002SR OM600 |
400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package 400V单N沟道高可靠性MOSFET的采用TO - 257AA封装
400V , 5.5Amp, N Channel MOSFET With Zener Gate Protection(400V , 5.5A,N沟道，MOS场效应管(带齐纳门保护
100V , 14 Amp, N Channel MOSFET With Zener Gate Protection(100V , 14A,N沟道，MOS场效应管(带齐纳门保护 100V的，14安培，N沟道MOSFET与齐门保护（100V的，14A条，沟道来说，MOS场效应管（带齐纳门保护）
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
200V Single N-Channel Hi-Rel MOSFET in a D2 package
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a D2 package
400V Single N-Channel Hi-Rel MOSFET in a D2 package
500V Single N-Channel Hi-Rel MOSFET in a D2 package
POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE
Isolated Hermetic Metal Package
|
International Rectifier, Corp.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| BF1107 |
N-channel single gate MOSFET
|
NXP Semiconductors
|
| NTA7002N NVTA7002N NVTA7002NT1G |
30 V, 154 mA, Single, N?Channel, Gate ESD Protection, SC-75
|
ON Semiconductor
|
| LNTA4001NT1G LNTA4001NT3G |
Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection
|
Leshan Radio Company
|
| MC74VHC1GT02 MC74VHC1GT02-D |
Single 2 Input NOR Gate TTL Level
Single 2-Input NOR Gate/ CMOS Logic Level Shifter with LSTTL Compatible Inputs
|
ON Semiconductor
|
| BUK212-50Y BUK212_217_50Y-01 BUK217-50Y |
BUK212-50Y; BUK217-50Y; Single channel high-side TOPFET(tm)
Single channel high-side TOPFET⑩
From old datasheet system
Single channel high-side TOPFET TM
Single channel high-side TOPFET垄芒
Single channel high-side TOPFET?/a>
25 A BUF OR INV BASED PRPHL DRVR, PSSO4
Single channel high-side TOPFET??/span>
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.
|
International Rectifier
|
| M38257E8F8 M38257M8-140GP M38254M6-125FP M38254M6- |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
IC LOGIC 1G08 SINGLE 2-INPUT POSITIVE-AND GATE -40 85C SOT-23-5 3000/REEL
Low-Power Dual 2-Input Positive-AND Gate 8-DSBGA -40 to 85
Low-Power Dual Bus Buffer Gate With 3-State Outputs 8-DSBGA -40 to 85
(M3825xxxx) SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
