| PART |
Description |
Maker |
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
|
Sensitron
|
| GB01SHT06-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve...
From old datasheet system
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SSR20C100CT |
Schottky Silicon Carbide
|
Solid States Devices, Inc
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| SHD626150 SHD626150D SHD626150N SHD626150P |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
