PART |
Description |
Maker |
APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS From old datasheet system
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General Electric Solid State ETC[ETC]
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APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN 22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN 1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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Microsemi, Corp. MICROSEMI CORP
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TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz high power COMMON BASE bipolar transistor.
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Microsemi, Corp. ETC[ETC] GHZTECH[GHz Technology] List of Unclassifed Manufacturers
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SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
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MAPDCT0002 |
2 Way 0o Power Divider 5 to 1000 MHz 2 Way 0篓卢 Power Divider 5 to 1000 MHz
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M/A-COM Technology Solutions, Inc.
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H-81-4TNC H-81-4 H-81-4BNC H-81-4N H-81-4SMA H814 |
180 Two-Way Power Divider 5 - 1000 MHz 180Two-Way Power Divider 51000 MHz 180 Two-Way Power Divider 5 - 1000 MHz 180双向功分5 - 1000兆赫
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MACOM[Tyco Electronics] Amphenol, Corp.
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IXFK21N100F IXFX21N100F |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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IXYS, Corp. IXYS Corporation
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APT10026JLL_03 APT10026JLL APT10026JLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology, Ltd. Microsemi, Corp. ADPOW[Advanced Power Technology]
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