| PART |
Description |
Maker |
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MMBTA1XLT1 |
Darlington Amplifier Transistors
|
WILLAS ELECTRONIC CORP
|
| MMBTA13-TP MMBTA1308 |
NPN Darlington Amplifier Transistor
|
天津环球磁卡股份有限公司
Micro Commercial Components
|
| MMBTA13 |
NPN (DARLINGTON AMPLIFIER TRANSISTOR)
|
Samsung semiconductor
|
| SAP09N |
BUILT-IN TEMPERATURE COMPENSATION DIODES / BUILT-IN EMITTER RESISTOR DARLINGTON
Darlington Transistor For Audio Amplifier With Temperature Compensation
|
SANKEN[Sanken electric]
|
| MMBTA14LT1G MMBTA13LT1 MMBTA13LT1_06 MMBTA13LT1G M |
Darlington Amplifier Transistors NPN Silicon(NPN型达林顿放大器晶体管)
|
ONSEMI[ON Semiconductor]
http://
|
| NTE269 NTE268 |
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| NTE266 |
Silicon NPN Transistor Darlington Power Amplifier
|
NTE Electronics
|
| NTE264 NTE263 |
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| MMBTA13LT1 MMBTA14LT1 ON2134 |
From old datasheet system
Darlington Amplifier Transistors(NPN Silicon)
|
http://
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola, Inc.
|
