PART |
Description |
Maker |
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
45912-0030 0459120030 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Signal, Power, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
RMPA2271 |
WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector
|
FAIRCHILD[Fairchild Semiconductor]
|
2SA886 2SA0886 |
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages OptiMOS2 Power-Transistor OptiMOS2功率晶体 30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1267A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1445A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1252A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|