PART |
Description |
Maker |
KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
KMM372C803CK KMM372C803CS KMM372C883CK KMM372C883C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|
KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883B |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
W986416DH |
SDRAM 4Mx16
|
Winbond Electronics
|
EMC646SP16K |
4Mx16 bit CellularRAM
|
EMLSI
|
KMM372F804BS |
8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
HSD16M64D16A HSD16M64D16A-10 HSD16M64D16A-10L HSD1 |
Synchronous DRAM Module 128Mbyte (16Mx64bit), DIMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd. HANBIT[Hanbit Electronics Co.,Ltd]
|
KMM5364005BSWG KMM5364005BSW |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HSD8M72D9A-10 HSD8M72D9A-10H HSD8M72D9A-10L HSD8M7 |
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|