| PART |
Description |
Maker |
| STP6NS25 7409 |
N-CHANNEL 250V - 0.9ohm - 6A TO-220 MESH OVERLAY⑩ MOSFET
From old datasheet system
N-CHANNEL 250V 0.9 OHM 6A TO-220 MESH OVERLAY MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB8NM60D |
N-CHANNEL 600V - 0.9Ohm - 8A - TO-220/D2PAK
|
ST Microelectronics
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A
250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A
|
http://
Intersil Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STB8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STP8NM60 |
N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FDI33N25 |
250V N-Channel MOSFET 250V N沟道MOSFET
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FQI16N25 FQB16N25 FQB16N25TM |
250V N-Channel MOSFET
250V N-Channel QFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQD4P25TM FQD4P25TMWS |
P-Channel QFETMOSFET -250V, -3.1A, 2.1
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| FQD6N25 FQU6N25TU FQD6N25TF FQD6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQI2P25 FQB2P25 FQB2P25TM FQI2P25TU |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB16NB25 STB16NB25T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB
N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET
N - CHANNEL 250V - 0.220Ohm - 16A - TO-263 PowerMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
