| PART |
Description |
Maker |
| BFY18111 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFY182S BFY182 BFY182ES BFY182H BFY182P |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY181 BFY181ES BFY181H BFY181P BFY181S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY180H BFY180P BFY180 BFY180ES BFY180S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT1 |
From old datasheet system
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BAS70 BAS70-T1 |
HiRel Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| BAS40 BAS40-T1 |
HiRel Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| BXY4211 |
HiRel Silicon PIN Diode
|
Infineon Technologies AG
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
