PART |
Description |
Maker |
0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor 50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3.7AI(丙)|的SOT - 324VAR 500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology] MICROSEMI POWER PRODUCTS GROUP
|
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
AT-31625 AT-31625-BLK AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-36408-TR1 AT-36408 AT-36408-BLK |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-33225-BLK AT-33225-TR1 AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for AMPS ETACS Phones
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
EMA6DXV5T5 |
(EMA6DXV5T1 / EMA6DXV5T5) Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors
|
ON Semiconductor
|
EMA3 |
Emitter common Dual digital transistor
|
Rohm
|
10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|