| PART |
Description |
Maker |
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| 2SK3712 |
High voltage: VDSS = 250 V Gate voltage rating: -30 V Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| AP20GT60ASP-HF AP20GT60ASP-HF14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Speed Switching
|
Advanced Power Electronics Corp.
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| IRGBC20K-S |
Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 8200uF; Voltage: 400V; Case Size: 76.2x170 mm; Packaging: Bulk
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A)
|
IRF[International Rectifier]
|
| NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
