| PART |
Description |
Maker |
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| NTE196 NTE197 |
Silicon Complementary Transistors Audio Power Output and Medium Power Switching
|
NTE[NTE Electronics]
|
| CM30MD3-12H |
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE 中功率开关使用平面性基地型，绝缘型
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FS4UM-12 FS1KM-16A FS20UM-6 |
Power MOSFETs: FS Series, Medium Voltage, 600V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| BD241C BD241A |
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
|
Comset Semiconductor
|
| 2N6126 |
Medium Power Linear and Switching Applications
|
Boca Semiconductor Corporation
|
| TIP31 TIP31C TIP31A TIP31B |
Medium Power Linear Switching Applications
|
SemiHow Co.,Ltd.
|
| QM75TX-HB |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM50CY-H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM30E2Y QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UMT2222AT106 |
NPN Medium Power Transistor (Switching)
|
Rohm
|
