PART |
Description |
Maker |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
CM75TJ-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd.
|
HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极 24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd. LRC[Leshan Radio Company]
|
ACS21MS 5962F9862901V9A 5962F9862901VCC 5962F98629 |
AC SERIES, DUAL 4-INPUT AND GATE, UUC14 Radiation Hardened Dual 4-Input AND Gate AC SERIES, DUAL 4-INPUT AND GATE, CDIP14 Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp. Intersil Corporation
|
74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp. NXP SEMICONDUCTORS
|