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M464S0924FTS - 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC

M464S0924FTS_830482.PDF Datasheet


 Full text search : 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC


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M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
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M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
M464S3323BN0-C1L_L1L M464S3323BN0 M464S3323BN0-C1H 144pin SDRAM SODIMM
SAMSUNG[Samsung semiconductor]
M471B1G73BH0 204pin Unbuffered SODIMM
Samsung
UG42W6424GSG UG42W6448GSG UG42W6428GSG 16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
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ETC[ETC]
HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
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Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
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Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
http://
V826632G24S 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
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MOSEL[Mosel Vitelic, Corp]
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