| PART |
Description |
Maker |
| LH28F004SCT-L85 LHF04C01 LH28F004SCN-L120 LH28F004 |
4M (512K x 8) flash memory
4M Flash File Memory
4Mbit Flash File Memory
|
SHARP[Sharp Electrionic Components]
|
| DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M25P32-VME6 M25P32-VMF6 M25P32-VMF6G M25P32-VMF6T |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M45PE40 M45PE40-VMP6G M45PE40-VMP6TG M45PE40-VMP6T |
4 Mbit Uniform Sector, Serial Flash Memory
From old datasheet system
4 MBIT, LOW VOLTAGE, PAGE-ERASABLE SERIAL FLASH MEMORY WITH BYTE-ALTERABILITY AND A 33 MHZ SPI BUS INTERFACE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
COIL CHOKE 27MH .50A RADIAL 8兆位，低电压，页面与字节可擦除串行闪存更改性，50MHz的SPI总线，标准品
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V.
ST Microelectronics
|
| ATTINY28L_V ATTINY28L ATTINY28V |
2K Flash Program Memory, 128 Bytes SRAM ( 32bytes register file), Keyboard interrupt. Up to 1 MIPS throughput at 1 MHz. 1.8 Volt operation
2K Flash Program Memory, 128 Bytes SRAM ( 32bytes register file), Keyboard interrupt. Up to 4 MIPS throughput at 4 MHz
From old datasheet system
|
Atmel
|
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
| SST25LF020A10 SST25LF020A-33-4C-QAE SST25LF020A-33 |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 3V PROM, PDSO8
2 Mbit SPI Serial Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
Microchip Technology, Inc.
Microchip Technology Inc.
|
