| PART |
Description |
Maker |
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| 2SK3114 2SK3114-AZ |
Switching power MOSFET
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| UPA2700TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET 开N沟道功率MOSFET
|
NEC, Corp.
|
| UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
| UPA2701TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| UPA2706GR UPA2706GR-E2 UPA2706GR-E1 UPA2706TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
Nch enhancement-type MOSFET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2885L 2SK2885S 2SK2885 |
Power switching MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ528 2SJ528L 2SJ528S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
