| PART |
Description |
Maker |
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| Q62702-B403 BB620 |
From old datasheet system
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I)
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管（对于Hyperband电视/录像机调谐器，屋宇署一
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
| BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
VHF variable capacitance double diodes 甚高频双可变电容二极
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| 1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管（用于电视调谐器的电子调谐）) 硅变容二极管设计电子调谐电视调谐器（硅可变电容二极管（用于电视调谐器的电子调谐）
Silicon Variable Capacitance Diode
|
Sony, Corp.
Sony Corporation
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Group
|
| HVD372B HVD372B06 HVD372B-06 |
Variable Capacitance Diode for VCO
16 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Renesas Electronics Corporation
|
| BB515 Q62702-B607 |
Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
|
