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AF002C4-39 - GaAs IC Control FET Series DC-2.5 GHz

AF002C4-39_809608.PDF Datasheet


 Full text search : GaAs IC Control FET Series DC-2.5 GHz
 Product Description search : GaAs IC Control FET Series DC-2.5 GHz


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PART Description Maker
AF002C4-39 AF002C1-39 Circular Connector; No. of Contacts:39; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:21-39 RoHS Compliant: No
GaAs IC Control FET Series DC-2.5 GHz
Alpha Industries, Inc.
ALPHA[Alpha Industries]
CF739 Q62702-F1215 From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
MGF0906 MGF0906B L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
Mitsubishi Electric Corporation
FHX06X FHX04X FHX05X KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
Eudyna Devices Inc
Fujitsu Media Devices Limited
MGFC45V5964A C455964A1 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
MITSUBISHI[Mitsubishi Electric Semiconductor]
MGF0906 MGF0906B 0906B LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
MGFL45V1920A 1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
MGF0907B 0907B MGF0907 L,S BAND POWER GaAs FET
From old datasheet system
L, S BAND POWER GAAS FET
MITSUBISHI[Mitsubishi Electric Semiconductor]
MGFC39V3742A04 MGFC39V3742A C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI[Mitsubishi Electric Semiconductor]
MGF0921A LnS Band GaAs FET
L & S BAND GaAs FET
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
 
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AF002C4-39 Product AF002C4-39 Level AF002C4-39 rectifier AF002C4-39 data AF002C4-39 diode
 

 

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