| PART |
Description |
Maker |
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V6472_97 MGFC38V6472 MGFC38V647297 |
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V6472A |
6.4-7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC39V3742A C393742A |
From old datasheet system
3.7 - 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V6472A C366472A |
From old datasheet system
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V3742A C363742A |
From old datasheet system
3.7 - 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| TPD08-0.5G02S |
0.5-2GHz 8-Way Power Divider
|
Transcom, Inc.
|
| TPD04-0.5G02S |
0.5-2GHz 4-Way Power Divider
|
Transcom, Inc.
|
| TPD03-0.5G02S |
0.5-2GHz 3-Way Power Divider
|
Transcom, Inc.
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
