| PART |
Description |
Maker |
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGF1403B1 MGF1403B |
LOW NOISE GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF1302 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| DAML6188 |
GaAs FET Low Noise Amplifier
|
DAICO[DAICO Industries, Inc.]
|
| SPF-3143 |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|
| SPF2086 |
Low Noise PHEMT GaAs FET
|
Sirenza Microdevices
|
| NE3519M04 NE3519M04-T2 NE3519M04-T2B |
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NE3520S03 NE3520S03-T1C NE3520S03-T1D |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NE3513M04-T2B-A |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE3521M04-T2B-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
