| PART |
Description |
Maker |
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2S |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体
BJT 双极型晶体管
|
NEC Corp.
NEC, Corp.
|
| MAX2611 |
DC-to-Microwave, Low-Noise Amplifier
|
Maxim
|
| MAX2650 |
DC-to-Microwave, 5V Low-Noise Amplifier
|
MAXIM - Dallas Semiconductor
|
| BRF504 |
NPN low noise silicon microwave transistor.
|
BOPOLARICS
ETC[ETC]
|
| 2N2857 |
Silicon Bipolar Low Noise microwave Transistors
|
M-pulse Microwave Inc.
|
| 2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC
|
| 2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| MMBTSC3356 |
for microwave low noise amplifier at VHF, UHF and CATV band
|
TY Semiconductor Co., Ltd
|
| MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ATR0610-PQQ ATR0610 |
2.7 V GPS LOW NOISE AMPLIFIER RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| 2SC3356 |
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
|
California Eastern Labs
|
