
	Part Number	Hot Search : PIC12 BT2907 MCA002 10X10 95022 MC4460 MTP35A1 BT2907
	Product Description
	Full Text Search

K9K4G08U1M - 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

K9K4G08U1M_777666.PDF Datasheet

Part No.

K9K4G08U1M K9F2G16U0M K9F2G08U0M

Description

256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

File Size

829.32K / 40 Page

Maker

Samsung Electronic
SAMSUNG[Samsung semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K9K4G08U0M

Maker:

Pack:

Stock:

Unit price for :

50: $22.59

100: $21.46

1000: $20.33

Email: oulindz@gmail.com

Contact us

Homepage

http://www.samsung.com/Products/Semiconductor/

Download

[ K9K4G08U1M K9F2G16U0M K9F2G08U0M Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ K9K4G08U1M K9F2G16U0M K9F2G08U0M Datasheet PDF Downlaod from Datasheet.HK

]
[K9K4G08U1M K9F2G16U0M K9F2G08U0M Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for K9K4G08U1M ]

[ Price & Availability of K9K4G08U1M by FindChips.com ]

Full text search : 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

Product Description search : 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

Related Part Number

PART	Description	Maker
K9K4G08U1M K9F2G16U0M K9F2G08U0M	256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory	Samsung Electronic SAMSUNG[Samsung semiconductor]
MC-4R256FKE8D-840	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)	Elpida Memory, Inc. ELPIDA[Elpida Memory]
MC-4R256FKE8S-840	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160	Elpida Memory, Inc. ELPIDA[Elpida Memory]
MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184	http:// NEC[NEC] NEC Corp.
HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A	256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M; 133MHz LVTTL interface SDRAM 256M; 100MHz LVTTL interface SDRAM	Elpida Memory
MX23L12822 23L12822	128M-BIT MASK ROM (16/32 BIT OUTPUT) From old datasheet system	Macronix 旺宏
UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U	128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范	NEC, Corp. NEC Corp.
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X	128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE	NEC
MB81EDS256445	MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP	Fujitsu Component Limited.
K4S280832B	128M-bit SDRAM	Samsung Electronics
TC58NVG1S3ETA00	2 GBIT (256M x 8 BIT) CMOS NAND E2PROM	Toshiba Semiconductor
MX25L25635F MX25L25635FMI10G MX25L25635FZ2I10G	3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O)	Macronix International

Related keyword From Full Text Search System

K9K4G08U1M 电子元器件	K9K4G08U1M 资料	K9K4G08U1M amplifier	K9K4G08U1M microprocessor	K9K4G08U1M ethernet transceiver
K9K4G08U1M Data	K9K4G08U1M specifications	K9K4G08U1M motorola	K9K4G08U1M Precision	K9K4G08U1M description