| PART |
Description |
Maker |
| NSTB1005DXV5T1G |
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| EMC3DXV5T1 |
(EMC3DXV5T1 / EMC4DXV5T1) Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors
|
ON Semiconductor
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| UMC2NT1G UMC5NT2 UMC3NT1G UMC3NT2 UMC5NT2G UMC5 UM |
Dual Bias Resistor Transistors
Dual Common Base-Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| 2SC3547B E000855 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR)
From old datasheet system
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON COLLECTOR)
|
Toshiba Semiconductor
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
| 0912-7 0912-7-3 0912-7-2 |
From old datasheet system
Intemally Matched, Common Base Transistor
7 W, 50 V internally matched, common base transistor
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Acrian
|
| 2SC4527 E000955 |
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, COVBERTER APPLICATIONS)(COMMON BASE)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 2SC4253 |
Good linearity of fT. Collector-base voltage VCBO 30 V
|
TY Semiconductor Co., Ltd
|
