| PART |
Description |
Maker |
| IRF630 FN1578 RF1S630SM |
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET
2A 200V 3.500 Ohm N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRFF220 FN1889 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
3.5A 200V 0.800 Ohm N-Channel Power MOSFET
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RM12F0.0115OHMCT RM12F0.0124OHMCT RM12F0.011OHMCT |
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0124 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0105 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP
|
Cal-Chip Electronics
|
| IRF610 FN1576 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSJ9260R4 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FS |
27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 27 A, 200 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series
200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HUF75945P3 HUF75945G3 HUF75945S3ST |
38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs
38A 200V 0.071 Ohm N-Channel UltraFET Power MOSFETs
38A, 200V, 0.071 Ohm, N-Channel, UltraFETPower MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA2 |
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
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