| PART |
Description |
Maker |
| 13N50 13N50G-TF1-T 13N50G-TA3-T 13N50G-TF3-T 13N50 |
13A, 500V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| APT5040CNR |
POWER MOS IV 500V 13.0A 0.400 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STW13NK100Z |
N-CHANNEL 1000 0.56 OHM 13A TO-247 ZENER-PROTECTED SUPERMESH MOSFET
N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STU13NC50 8257 |
N-CHANNEL 500V - 0.31ohm - 13A Max220 PowerMesh?II MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
|
STMicroelectronics
|
| STD10NF10-1 STD10NF10T4 STD10NF10 D10NF10 |
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET?/a> II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK LOW GATE CHARGE STRIPFET⒙ II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STW13NB60 |
N-CHANNEL 600V - 0.48 OHM - 13A - TO-247/ISOWATT218 POWERMESH MOSFET
|
ST Microelectronics
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
| RM12F0.0115OHMCT RM12F0.0124OHMCT RM12F0.011OHMCT |
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0124 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0105 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP
|
Cal-Chip Electronics
|
| FQB5N50C FQI5N50C FQB5N50CTM FQI5N50CTU |
500V N-Channel MOSFET 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
|
