PART |
Description |
Maker |
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BF998R |
From old datasheet system Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
INJ0001AU1 INJ0001AM1 INJ0001AX08 INJ0001AC1 INJ00 |
High speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications) From old datasheet system Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
H7N1004LD-15 |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation
|
H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation.
|
RJM0306JSP-00-J0 RJM0306JSP |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H7N1004LM H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
2SK512 |
SILICON C-CHANNEL MOSFET HIGH SPEED POWER SWITCHING
|
List of Unclassifed Manufacturers Hitachi Semiconductor ETC
|
RJK6020DPK-00-T0 RJK6020DPK |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|