PART |
Description |
Maker |
MMFT3055EL |
MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MTB50N06EL_D ON2429 |
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS From old datasheet system
|
ON Semi
|
MTD20N06HDL_D ON2582 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS From old datasheet system
|
ON Semi
|
MTD20P03 MTD20P03HDL MTD20P03HDL_D ON2488 |
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM From old datasheet system
|
Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
PMV45EN PMV45EN-01 |
uTrenchMOS tm enhanced logic level FET N-channel TrenchMOS logic level FET mTrenchMOS enhanced logic level FET From old datasheet system mTrenchMOSTM enhanced logic level FET
|
NXP Semiconductors N.V. Philips
|
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA N-hannel Enhancement-ode Logic Level SOT23 From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
PHP63NQ03LT PHB63NQ03LT PHD63NQ03LT |
TrenchMOS logic level FET 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET TrenchMOS(tm) logic level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|