| PART |
Description |
Maker |
| ISL5944207 |
1GHz, 4 x 1 Multiplexing Amplifier
|
Intersil Corporation
|
| HA3004 |
3.1GHz - 3.5GHz Low Noise Amplifier
|
HBH Microwave GmbH
|
| HA1-2541-5 HA-2541 HA-2541_04 HA-254104 |
40MHz, Fast Settling, Unity Gain Stable, Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| LT1251 LT1251CN LT1251CS LT1256 LT1256CN LT1256CS |
From old datasheet system
40MHz Video Fader and DC Gain Controlled Amplifier
|
LINER[Linear Technology]
|
| NJG1105F |
1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| FMC7G50US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
