| PART |
Description |
Maker |
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| S-AV40 |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| S9018 SS9018 SS9018HBU |
NPN Epitaxial Silicon Transistor
AM/FM Amplifier Local Oscillator of FM/VHF Tuner
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
AM/FM Amplifier / Local Oscillator of FM/VHF Tuner
|
FAIRCHILD[Fairchild Semiconductor]
|
| RF-5800V-V500 RF-5800V-VS501 |
FALCON II VHF POWER AMPLIFIER
|
Harris Corporation
|
| BFR97 |
VHF-UHF Power Amplifier
|
ST Microelectronics
|
| S-AV36A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 80-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| 2SK3075 EE08687 |
From old datasheet system
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2640 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
