| PART |
Description |
Maker |
| LTV-354T |
Hybrid substrates that require high density mounting
|
光宝科技股份有限公司
|
| LTV-354T |
Hybrid substrates that require high density mounting
|
Lite-On Technology Corporation
|
| 698-3-R100KB |
Nichrome Resistor Networks on Ceramic Substrates
|
List of Unclassifed Man...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HE83R125 |
This chip is suitable for the applications that require higher performance
|
King blillion Electronics Co.,Ltd.
|
| AN420 |
Occasionally the analog signal provided by external sensors require
|
STMicroelectronics
|
| QHD-2Q-0.15G |
130 MHz - 174 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.25 dB INSERTION LOSS-MAX
QUAD HYBRID
|
MERRIMAC INDUSTRIES INC
Merrimac Industries, Inc.
|
| AWT1921 AWT1921S11 |
The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point.
Integrated High Power Amp 1610 MHz
From old datasheet system
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| HH-105PIN HH-105 |
20-300 MHz, hybrid lunction
Hybrid Junction 20 - 300 MHz 混合0 - 300兆赫
|
MA-Com
MACOM[Tyco Electronics]
|
| DQF-102 |
90o HYBRID MODEL
90ì HYBRID MODEL
|
SYNERGY MICROWAVE CORPORATION
|
| M57215BL M57215 M57215L |
Hybrid IC Base Drive Modules (2 Amperes/-3, 10 Volts)
Hybrid IC Base Drive Modules (2 Amperes/-3 10 Volts)
Hybrid IC Base Drive Modules (2 Amperes/-3 / 10 Volts)
10 AMP MINIATURE POWER RELAY
|
POWEREX[Powerex Power Semiconductors]
Powerex Powers
|
| HH-110PIN HH-127PIN HHS-110 HH-110 HH-127 |
10-500 MHz, hybrid lunction
Hybrid Junction 10 - 500 MHz
|
MA-Com
MACOM[Tyco Electronics]
|
