| PART |
Description |
Maker |
| NTE1060 |
Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| 2SA1815 2SA18154 2SA18153 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-236 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 50mA的一（c）|36
FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications
|
Coilcraft, Inc.
NXP Semiconductors N.V.
SANYO[Sanyo Semicon Device]
|
| 2SC4365 |
VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications
|
Sanyo Semicon Device
|
| B1215RU B1211RU B1205RU |
Ultra-Wide Input 12W Single & Dual Output DC/DC Con verters
Ultra-Wide Input 12W Single & Dual Output DC/DC Con verters 超宽输入12瓦单
|
Electronic Theatre Controls, Inc.
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
| RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| KSC2982DTF KSC2982CTF |
NPN Epitaxial Silicon Transistor; Package: SOT-89; No of Pins: 3; Container: Tape & Reel 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| MPSA13RA |
NPN Darlington Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 1200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| RA07H0608M10 |
68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| 2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
|
TOSHIBA
|
