PART |
Description |
Maker |
HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 |
(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆(64Mx8bit / 32Mx16bit)NAND闪存
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632 |
512Mbit SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
H55S5132EFR H55S5132EFR-75M |
512Mbit (16Mx32bit) Mobile SDR Memory
|
Hynix Semiconductor
|
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM 512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J5232 |
512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
SAK-C505CA-4RC SAK-C505CA-LC C505CA-4RC SAA-C505CA |
8-Bit Microcontrollers - High temperature 8-Bit CMOS microcontroller (T=150°C ) with mask-programmable ROM, bare die, with CAN, (20 MHz) 8-bit Single-Chip Microcontroller (Bare Die Delivery)
|
INFINEON[Infineon Technologies AG]
|
M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
ST62P30BB6 ST6230B ST62P30BB1 |
IC, 60FBGA, 512MBIT DDR DRAM 60 PIN BGA 32MBX16 8-BIT MICROCONTROLLER ( MCU ) WITH OTP. ROM. FASTROM. A/D CONVERTER. 16-BIT AUTO-RELOAD TIMER. EEPROM. SPI. UART AND 28 PINS 8位微控制器(MCU)的与检察官办公室。光盘FASTROM。的A / D转换器16位自动重加载定时器EEPROM中。的SPIUART8个引
|
Cypress Semiconductor, Corp.
|
SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|