| PART |
Description |
Maker |
| AD5821 AD5821-WAFER AD5821D-WAFER AD5821BCBZ-REEL1 |
120 mA, Current Sinking, 10-Bit, I2C DAC SERIAL INPUT LOADING, 250 us SETTLING TIME, 10-BIT DAC, UUC8
|
Analog Devices, Inc.
|
| VM149D |
Programmable sinking output current
|
Silicon Touch Technolog...
|
| VM149B |
Programmable sinking output current
|
Silicon Touch Technolog...
|
| MIC4103 MIC4103YM MIC4104 MIC4104YM |
100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current
|
Micrel Semiconductor
|
| MP172 |
700 V Non-Isolated Off-Line Regulator Up to 120 mA Output Current
|
Monolithic Power System...
|
| AQW210HLAX AQW210HLAZ AQW210HL AQW210HLA |
PhotoMOS relay, GU (general use) type, 2-ch (form A) current limit function type. AC/DC type. I/O isolation: 5,000 VAC. Output rating: load voltage 350 V, load current 120 mA. Surface-mount. Tape and reel packing style. Picked from the 4/5
PhotoMOS relay, GU (general use) type, 2-ch (form A) current limit function type. AC/DC type. I/O isolation: 5,000 VAC. Output rating: load voltage 350 V, load current 120 mA. Surface-mount. Tube packing style.
PhotoMOS relay, GU (general use) type, 2-ch (form A) current limit function type. AC/DC type. I/O isolation: 5,000 VAC. Output rating: load voltage 350 V, load current 120 mA. Surface-mount. Tape and reel packing style. Picked from the 1/2
PhotoMOS relay, GU (general use) type, 2-ch (form A) current limit function type. AC/DC type. I/O isolation: 5,000 VAC. Output rating: load voltage 350 V, load current 120 mA. Trough hole terminal. Tube packing style.
GU (General Use) Type 2-Channel (Form A) Current Limit Function Type
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
|
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
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http://
Jinan Gude Electronic D...
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| ISL88550A ISL88550AIRZ ISL88550AIRZ-T |
Synchronous Step Down Controller with Sourcing and Sinking LDO Regulator
|
Intersil Corporation
|
| ISL88550A ISL88550AIRZ ISL88550AIRZ-T |
Synchronous Step-Down Controller with Sourcing and Sinking LDO Regulator
|
Intersil Corporation
|
| MSK3017-15 |
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
|
M.S. Kennedy Corporatio...
|
| C9732DK-1111 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 × 120 mm
|
Hamamatsu Corporation
|
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