| PART |
Description |
Maker |
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| NTP18N06L NTB18N06LT4 NTB18N06LT4G NTB18N06L |
Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK)
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak
|
Microsemi, Corp.
ONSEMI[ON Semiconductor]
|
| 4N90L-TA3-T 4N90G-TA3-T |
4 Amps, 900 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| 2N7002L-AE2-R 2N7002G-AE2-R |
0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 30N06-TF3-R 30N06-TF3-T 30N06L-TA3-R 30N06L-TF3-T |
30 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MMSF3P03HD-D |
Power MOSFET 3 Amps, 30 Volts P-Channel SO-8
|
ON Semiconductor
|
| UT40N03 UT40N03G-TM3-T UT40N03G-TN3-R UT40N03L-TN3 |
40 Amps, 30 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 60N06L-TA3-T 60N06-TA3-T 60N06 |
60 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
友顺科技股份有限公司
|
| MMSF4P01HD-D |
Power MOSFET 4 Amps, 12 Volts P-Channel SO-8
|
ON Semiconductor
|
