| PART |
Description |
Maker |
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET
0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|
| NES1823P-50 |
50 W L-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| 3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
| SGM2016AM SGM2016AP SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| 3SK239A |
From old datasheet system
Silicon NPN Triple Diffused
GaAs Dual Gate MES FET
|
Hitachi Semiconductor
|
| HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
| TIM0910-10 |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
