| PART |
Description |
Maker |
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
|
| GS8160Z18T-200 GS8160Z18BT-250 GS8160Z18BT-150 GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z1 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18，为512k × 36，为512k × 36 35.7同步突发静态存储器
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8162V18B GS8162V36B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8161ZV18B GS8161ZV32B GS8161ZV36B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8160F18B GS8160F36B GS8160F32B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8160FV18B GS8160FV32B GS8160FV36B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS816036CT-333T GS816018CT-333T GS816018CGT-250IT |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 4.5 ns, PQFP100
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 4.5 ns, PQFP100
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS816132BD-150I GS816118BGD-150I GS816118BD-200 GS |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8162V72CGC-200 GS8162V72CGC-150 GS8162V72CGC-300 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 6.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5.5 ns, PBGA209
|
GSI Technology, Inc.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
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