| PART |
Description |
Maker |
| AT91SAM9G45PRE |
DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR
|
ATMEL Corporation
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| W986432DH-6I W986432DH-7L W986432DH-5 |
Industrial SDRAM
Low Power SDRAM
|
Winbond Electronics
|
| W988D6FB |
(W988D2FB / W988D6FB) 256Mb Mobile LPSDR
|
Winbond
|
| EP7312-IV-90 EP7312-EB-90 EP7312-IR-90 EP7312-CB-9 |
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 32-BIT, FLASH, 90 MHz, RISC MICROCONTROLLER, PBGA204
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 高性能，低功耗的片上系统的SDRAM和增强数字音频接
|
Cirrus Logic, Inc.
CIRRUS LOGIC INC
|
| MT46H64M16LFBF-6 |
Mobile Low-Power DDR SDRAM
|
Micron Technology
|
| CMS3216LAX-75XX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| CMS3216LAX-75EX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| HYB18L256160BC-7.5 HYE18L256160BC-7.5 HYB18L256160 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
