| PART |
Description |
Maker |
| AM50DL9608GT75IS AM50DL9608GT70IS AM50DL9608GT70IT |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Spansion, Inc.
|
| AM49DL320BGT851 AM49DL320BGT85IS AM49DL320BGT85IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
| EN71GL064B0 EN71GL064B0-70CWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| EN71NS128B0-7DCWP EN71NS128B011 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| AT52BR3228A AT52BR3224A AT52BR3228AT-70CI AT52BR32 |
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory 32兆位闪存4兆位/ 8兆位的SRAM堆栈内存
|
Atmel Corp.
Atmel, Corp.
|
| S29GL032A100BFIR10 S29GL032A100TFIR10 S29GL032A100 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 64兆，32兆和16兆位3.0伏只页面模式闪存，含00纳米MirrorBit工艺技
|
Spansion Inc.
Spansion, Inc.
|
| AM29SL800CT150WBC AM29SL800CB120EI AM29SL800CB120E |
CAP 150UF 6.3V 20% TANT SMD-7343-30 TR-7
Quad 2-Input NOR Gates 14-SOIC -55 to 125 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
IC LOGIC 1G79 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP -40 85C SOT-23-5 3000/REEL 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
16-Bit Buffer/Line Driver, OE Active Low
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM45DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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