PART |
Description |
Maker |
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
DPC-24-1000B20 DPC-10-1000B3 DPC-10-440B2 DPC-16-7 |
POWER TRANSFORMER, 24 VA POWER TRANSFORMER, 10 VA POWER TRANSFORMER, 4.4 VA POWER TRANSFORMER, 1.2 VA POWER TRANSFORMER, 1 VA Low Frequency, Open-Style Laminated Concentric Vertical Profile, PC Plug-In Series
|
Pulse Electronics, Corp. PULSE ELECTRONICS CORP Pulse A Technitrol Company Pulse A Technitrol Comp...
|
45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
2SC5993 |
Power Device - Power Transistors - Television/Display For power amplification For TV VM circuit
|
PANASONIC[Panasonic Semiconductor]
|
IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1267A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1445A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
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