| PART |
Description |
Maker |
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| PD44324185BF5-E33-FQ1-A PD44324185BF5-E40-FQ1-A PD |
36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| R1Q4A3636BBG-60R R1Q4A3618BBG-60R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
http://
|
| K7I161882B |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
