PART |
Description |
Maker |
HY62UF16804B HY62UF16804B-DFC HY62UF16804B-DFI |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
HY62LF16806A-SMC HY62LF16806A-DMC HY62LF16806A-DMI |
x16|2.5V|70/85/100|Super Low Power Slow SRAM - 8M x16 | 2.5V的| 70/85/100 |超级低功耗SRAM的速度 800 512Kx16bit full CMOS SRAM
|
Alpha Industries, Inc. Hynix Semiconductor
|
HY62KF08401C HY62KF08401C-DI HY62KF08401C-DS HY62K |
x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M 512Kx8bit full CMOS SRAM
|
Hynix Semiconductor
|
HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
HY62UF16201A HY62UF16201A-I |
128Kx16bit full CMOS SRAM
|
HYNIX[Hynix Semiconductor]
|
HY62LF16101C |
64K x 16bit Full CMOS SRAM
|
Hynix Semiconductor
|
HY62UF08401C HY62UF08401C-DSI HY62UF08401C-I HY62U |
Super Low Power Slow SRAM - 4Mb High Speed, Super Low Power and 4Mbit Full CMOS SRAM
|
Hynix Semiconductor
|
K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
HY62SF16804B HY62SF16804B-C HY62SF16804B-DFC HY62S |
RES, 33, 1/2W, TKF, 5%, 2010 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
|
Hynix Semiconductor Inc.
|
HY62LF16806B-I HY62LF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|